Ангстрем
Дискретные MOSFET(N-channel)
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Готовность производства
Тип технологии
Корпус
Vds(max)
Id(max)
RDS(on)
| Название | Vds(max), В | Id(max), А | RDS(on), Ом | Исполнение |
|---|---|---|---|---|
| AnP90N03 | 30 | 90 (75) | 0.005 | Trench |
| AnB90N03 | 30 | 90 (75) | 0.005 | Trench |
| AnP70N06 | 60 | 70 (50) | 0.0083 | Trench |
| AnB70N06 | 60 | 70 (50) | 0.0083 | Trench |
| AnP50N10 | 100 | 50 (42) | 0.014 | Trench |
| AnB50N10 | 100 | 50 (42) | 0.014 | Trench |
| AnR7N80 | 800 | 7 | 1,8 | Low charge |
| AnR10N70 | 700 | 10 | 1 | Low charge |
| AnR14N60 | 600 | 14 | 0.55 | Low charge |
| AnR16N50 | 500 | 16 | 0.4 | Low charge |
| AnP4N80 | 800 | 3 | 3,5 | Low charge |
| AnB4N80 | 800 | 3 | 3,5 | Low charge |
| AnP5N70 | 700 | 5 | 2 | Low charge |
| AnB5N70 | 700 | 5 | 2 | Low charge |
| AnP6N65 | 650 | 6 | 1,5 | Low charge |
| AnB6N65 | 650 | 6 | 1,5 | Low charge |
| AnP7N60 | 600 | 7 | 0.75 | Low charge |
| AnB7N60 | 600 | 7 | 0.75 | Low charge |
| AnP8N50 | 500 | 8 | 1 | Low charge |
| AnB8N50 | 500 | 8 | 1 | Low charge |
| AnU5N50Z | 500 | 4,5 | 1,5 | Zener diode |
| AnD5N50Z | 500 | 4,5 | 1,5 | Zener diode |
| AnU3N50Z | 500 | 3 | 2,7 | Zener diode |
| AnD3N50Z | 500 | 3 | 2,7 | Zener diode |
| AnU4N70 | 700 | 4 | 3,2 | Low charge |