Ангстрем
Дискретные MOSFET(N-channel)
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Готовность производства
Тип технологии
Корпус
Vds(max)
Id(max)
RDS(on)
| Название | Vds(max), В | Id(max), А | RDS(on), Ом | Исполнение |
|---|---|---|---|---|
| AnP90N03 | 30 | 90 (75) | 0.005 | Trench |
| AnB75N03 | 30 | 75 | 0.0026 | Planar |
| AnB90N03 | 30 | 90 (75) | 0.005 | Trench |
| AnP91N03 | 30 | 91 | 0.005 | Trench |
| AnB91N03 | 30 | 91 | 0.005 | Trench |
| AnR37N03 | 30 | 37 | 0.009 | Planar |
| AnU50N03 | 30 | 50 | 0.01 | Trench |
| AnP46N03L | 30 | 46 | 0.02 | Planar |
| AnD50N03 | 30 | 50 | 0.01 | Trench |
| AnP46N03 | 30 | 46 | 0.02 | Planar |
| AnB46N03L | 30 | 46 | 0.02 | Planar |
| AnB46N03 | 30 | 46 | 0.02 | Planar |
| AnD30N06 | 60 | 30 | 0.015 | Planar |
| AnP45N06 | 60 | 45 | 0.024 | Planar |
| AnB50N06 | 60 | 50 | 0.0083 | Planar |
| AnB45N06 | 60 | 45 | 0.024 | Planar |
| AnP70N06 | 60 | 70 (50) | 0.0083 | Trench |
| AnU20N06 | 60 | 20 | 0.06 | Low charge |
| AnB70N06 | 60 | 70 (50) | 0.0083 | Trench |
| AnR55N06 | 60 | 55 | 0.01 | Planar |
| AnD20N06 | 60 | 20 | 0.06 | Low charge |
| AnP65N06 | 60 | 65 | 0.01 | Trench |
| AnB65N06 | 60 | 65 | 0.01 | Trench |
| AnU35N06 | 60 | 35 | 0.02 | Trench |
| AnD35N06 | 60 | 35 | 0.02 | Trench |