
Ангстрем
Дискретные MOSFET(N-channel)
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Готовность производства
Тип технологии
Корпус
Vds(max)
Id(max)
RDS(on)
Название | Vds(max), В![]() | Id(max), А | RDS(on), Ом | Исполнение |
---|---|---|---|---|
AnD14N10L | 100 | 14 | 0.1 | Planar |
AnU12N10L | 100 | 12 | 0.1 | Planar |
AnD28N10 | 100 | 28 | 0.034 | Planar |
AnP53N10 | 100 | 53 | 0.015 | Trench |
AnB26N10L | 100 | 26 | 0.05 | Planar |
AnD14N10 | 100 | 14 | 0.1 | Planar |
AnD12N10L | 100 | 12 | 0.1 | Planar |
AnU30N10L | 100 | 30 | 0.05 | Trench |
AnB53N10 | 100 | 53 | 0.015 | Trench |
AnR20N12L | 120 | 20 | 0.018 | Planar |
AnP12N20L | 200 | 12 | 0.2 | Planar |
AnP12N20 | 200 | 12 | 0.2 | Planar |
AnB12N20L | 200 | 12 | 0.2 | Planar |
AnB12N20 | 200 | 12 | 0.2 | Planar |
AnR27N20 | 200 | 27 | 0.08 | Planar |
AnP18N20 | 200 | 18 | 0.15 | |
AnR35N20 | 200 | 35 | 0.055 | Planar |
AnU9N20 | 200 | 9 | 0.32 | Low charge |
AnR10N20L | 200 | 10 | 0.05 | Planar |
AnD9N20 | 200 | 9 | 0.32 | Low charge |
AnR40N20 | 200 | 40 | 0.065 | Planar |
AnU4N25 | 250 | 4 | 0.45 | Planar |
AnD4N25 | 250 | 4 | 0.45 | Planar |
AnU6N40 | 400 | 6 | 0.7 | Low charge |
AnD6N40 | 400 | 6 | 0.7 | Low charge |