Ангстрем
Дискретные MOSFET(N-channel)
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Готовность производства
Тип технологии
Корпус
Vds(max)
Id(max)
RDS(on)
| Название | Vds(max), В | Id(max), А | RDS(on), Ом | Исполнение |
|---|---|---|---|---|
| AnR24N40 | 400 | 24 | 0.23 | Planar |
| AnP11N40 | 400 | 11 | 0.35 | Low charge |
| AnB11N40 | 400 | 11 | 0.35 | Low charge |
| AnD5N50Z | 500 | 4,5 | 1,5 | Zener diode |
| AnU3N50Z | 500 | 3 | 2,7 | Zener diode |
| AnD3N50Z | 500 | 3 | 2,7 | Zener diode |
| AnR22N50 | 500 | 22 | 0.28 | Planar |
| AnP8N50 | 500 | 8 | 1 | Low charge |
| AnB8N50 | 500 | 8 | 1 | Low charge |
| AnR16N50 | 500 | 16 | 0.4 | Low charge |
| AnU5N50Z | 500 | 4,5 | 1,5 | Zener diode |
| AnU2N60 | 600 | 2 | 4,4 | Low charge |
| AnD2N60 | 600 | 2 | 4,4 | Low charge |
| AnR16N60 | 600 | 15,5 | 0.4 | Planar |
| AnP7N60 | 600 | 7 | 0.75 | Low charge |
| AnB7N60 | 600 | 7 | 0.75 | Low charge |
| AnU4N60 | 600 | 4 | 1,8 | Low charge |
| AnD4N60 | 600 | 4 | 1,8 | Low charge |
| AnR14N60 | 600 | 14 | 0.55 | Low charge |
| AnU1N60 | 600 | 1 | 9,5 | Low charge |
| AnD1N60 | 600 | 1 | 9,5 | Low charge |
| AnR9N65 | 650 | 8,5 | 0.93 | Planar |
| AnU2N65 | 650 | 2 | 5,5 | Low charge |
| AnD2N65 | 650 | 2 | 5,5 | Low charge |
| AnP6N65 | 650 | 6 | 1,5 | Low charge |