Ангстрем
Дискретные MOSFET(N-channel)
Вы здесь
Готовность производства
Тип технологии
Корпус
Vds(max)
Id(max)
RDS(on)
| Название | Vds(max), В | Id(max), А | RDS(on), Ом | Исполнение |
|---|---|---|---|---|
| AnD8N65 | 650 | 8 | 0.62 | |
| AnB6N65 | 650 | 6 | 1,5 | Low charge |
| AnU4N65 | 650 | 4 | 2,7 | Low charge |
| AnD4N65 | 650 | 4 | 2,7 | Low charge |
| AnU1N65 | 650 | 1 | 11 | Low charge |
| AnD1N65 | 650 | 1 | 11 | Low charge |
| AnP5N70 | 700 | 5 | 2 | Low charge |
| AnB5N70 | 700 | 5 | 2 | Low charge |
| AnU4N70 | 700 | 4 | 3,2 | Low charge |
| AnD4N70 | 700 | 4 | 3,2 | Low charge |
| AnU1N70 | 700 | 1 | 13 | Low charge |
| AnD1N70 | 700 | 1 | 13 | Low charge |
| AnR10N70 | 700 | 10 | 1 | Low charge |
| AnU2N70 | 700 | 2 | 7 | Low charge |
| AnD2N70 | 700 | 2 | 7 | Low charge |
| AnB4N80 | 800 | 3 | 3,5 | Low charge |
| AnP10N80 | 800 | 10 | 0.9 | |
| AnP8N80 | 800 | 8 | 1,55 | |
| AnP6N80 | 800 | 5,5 | 2,7 | |
| AnR11N80 | 800 | 11 | 0.75 | Planar |
| AnR7N80 | 800 | 7 | 1,8 | Low charge |
| AnP4N80 | 800 | 3 | 3,5 | Low charge |
| AnP4N90 | 900 | 4 | 2,3 | Low charge |
| AnB4N90 | 900 | 4 | 2,3 | Low charge |
| AnU2N90 | 900 | 2 | 5 | Low charge |