Ангстрем
Дискретные MOSFET(P-channel)
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Готовность производства
Тип технологии
Корпус
Id(max)
RDS(on)
| Название | Vds(max), В | Id(max), А | RDS(on), Ом | Исполнение |
|---|---|---|---|---|
| AnP32P03L | -30 | -32 | 0.04 | Planar |
| AnP32P03 | -30 | -32 | 0.04 | Planar |
| AnB32P03L | -30 | -32 | 0.04 | Planar |
| AnB32P03 | -30 | -32 | 0.04 | Planar |
| AnR26P10L | -100 | -26 | 0.07 | Planar |
| AnR26P10 | -100 | -26 | 0.07 | Planar |
| AnR17P20L | -200 | -17 | 0.17 | Planar |
| AnR17P20 | -200 | -17 | 0.17 | Planar |
| AnU6P10L | -100 | -6 | 0.25 | Planar |
| AnU6P10 | -100 | -6 | 0.25 | Planar |
| AnD6P10L | -100 | -6 | 0.25 | Planar |
| AnD6P10 | -100 | -6 | 0.25 | Planar |
| AnP53P03 | -30 | 53 | 0.02 | Trench |
| AnB53P03 | -30 | 53 | 0.02 | Trench |
| AnU29P03 | -30 | 29 | 0.03 | Trench |
| AnD29P03 | -30 | 29 | 0.03 | Trench |
| AnP46P06 | -60 | 46 | 0.02 | Trench |
| AnB46P06 | -60 | 46 | 0.02 | Trench |
| AnU25P06 | -60 | 25 | 0.04 | Trench |
| AnD25P06 | -60 | 25 | 0.04 | Trench |
| AnP29P10 | -100 | 29 | 0.05 | Trench |
| AnB29P10 | -100 | 29 | 0.05 | Trench |
| AnU15P10 | -100 | 15 | 0.11 | Trench |
| AnD15P10 | -100 | 15 | 0.11 | Trench |
| AnU14P06 | -60 | 14 | 0.13 | Low charge |